FDFMA3N109 Todos los transistores

 ..1. Size:369K  fairchild semi
 fdfma3n109.pdf

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m

 9.1. Size:602K  fairchild semi
 fdfma2p857.pdf

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s

 9.2. Size:346K  fairchild semi
 fdfma2p853t.pdf

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS

 9.3. Size:379K  fairchild semi
 fdfma2p029z.pdf

July 2014 FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.1A, 95m Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1A portable applications. It features a MOSFET with very low on-

 9.4. Size:289K  fairchild semi
 fdfma2p859t.pdf

July 2009 FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOSFET with low

 9.5. Size:392K  fairchild semi
 fdfma2p853.pdf

September 2008 July 2014 FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

 9.6. Size:615K  fairchild semi
 fdfma2n028z.pdf

July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68m Features General Description MOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 68m at VGS = 4.5V, ID = 3.7A applications. It features a MOSFET with low on-state resistance, Max