FDFMA3N109. Аналоги и основные параметры

Наименование производителя: FDFMA3N109

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 30 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.123 Ohm

Тип корпуса: MICROFET2X2

Аналог (замена) для FDFMA3N109

- подборⓘ MOSFET транзистора по параметрам

 

FDFMA3N109 даташит

 ..1. Size:369K  fairchild semi
 fdfma3n109.pdf pdf_icon

FDFMA3N109

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET This device is designed specifically as a single package 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 m @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET = 163 m

 9.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA3N109

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s

 9.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA3N109

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS

 9.3. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA3N109

July 2014 FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.1A, 95m Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1A portable applications. It features a MOSFET with very low on-

ПОКАЗАТЬ ЕЩЁ

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