FDFS2P753Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2006FDFS2P753ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode-30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0AThe FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5Aforward voltage drop Schottky barrie

April 2008FDFS2P753AZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchilds PowerTrench Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5AMOSFET with a Schottky diode

October 2000FDFS2P102Integrated P-Channel MOSFET and Schottky DiodeGeneral Description FeaturesThe FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 VFairchild's high cell density MOSFET with a very low forwardRDS(ON) = 0.200 @ VGS = 4.5 V.voltage drop Schottky barrier rectifier in an SO-8 package. VF

September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif

August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifier