FDFS2P753Z Todos los transistores

 ..1. Size:487K  fairchild semi
 fdfs2p753z.pdf

November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m Features General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A forward voltage drop Schottky barrie

 5.1. Size:268K  fairchild semi
 fdfs2p753az.pdf

April 2008 FDFS2P753AZ tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m Features General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild s PowerTrench Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A MOSFET with a Schottky diode

 8.1. Size:85K  fairchild semi
 fdfs2p102.pdf

October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 V Fairchild's high cell density MOSFET with a very low forward RDS(ON) = 0.200 @ VGS = 4.5 V. voltage drop Schottky barrier rectifier in an SO-8 package. VF

 8.2. Size:292K  fairchild semi
 fdfs2p103.pdf

September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

 8.3. Size:88K  fairchild semi
 fdfs2p106a.pdf

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif

 8.4. Size:141K  fairchild semi
 fdfs2p102a.pdf

August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

 8.5. Size:142K  fairchild semi
 fdfs2p103a.pdf

August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifier