FDFS2P753Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDFS2P753Z
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package:
SO-8
FDFS2P753Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDFS2P753Z
Datasheet (PDF)
..1. Size:487K fairchild semi
fdfs2p753z.pdf 
November 2006FDFS2P753ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode-30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0AThe FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5Aforward voltage drop Schottky barrie
5.1. Size:268K fairchild semi
fdfs2p753az.pdf
April 2008FDFS2P753AZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchilds PowerTrench Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5AMOSFET with a Schottky diode
8.1. Size:85K fairchild semi
fdfs2p102.pdf
October 2000FDFS2P102Integrated P-Channel MOSFET and Schottky DiodeGeneral Description FeaturesThe FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 VFairchild's high cell density MOSFET with a very low forwardRDS(ON) = 0.200 @ VGS = 4.5 V.voltage drop Schottky barrier rectifier in an SO-8 package. VF
8.2. Size:292K fairchild semi
fdfs2p103.pdf
September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie
8.3. Size:88K fairchild semi
fdfs2p106a.pdf
June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif
8.4. Size:141K fairchild semi
fdfs2p102a.pdf
August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie
8.5. Size:142K fairchild semi
fdfs2p103a.pdf
August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifier
Datasheet: WPB4002
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