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FDFS2P753Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDFS2P753Z
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDFS2P753Z

 

 

FDFS2P753Z Datasheet (PDF)

 ..1. Size:487K  fairchild semi
 fdfs2p753z.pdf

FDFS2P753Z FDFS2P753Z

November 2006FDFS2P753ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode-30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0AThe FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5Aforward voltage drop Schottky barrie

 5.1. Size:268K  fairchild semi
 fdfs2p753az.pdf

FDFS2P753Z FDFS2P753Z

April 2008FDFS2P753AZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchilds PowerTrench Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5AMOSFET with a Schottky diode

 8.1. Size:85K  fairchild semi
 fdfs2p102.pdf

FDFS2P753Z FDFS2P753Z

October 2000FDFS2P102Integrated P-Channel MOSFET and Schottky DiodeGeneral Description FeaturesThe FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 VFairchild's high cell density MOSFET with a very low forwardRDS(ON) = 0.200 @ VGS = 4.5 V.voltage drop Schottky barrier rectifier in an SO-8 package. VF

 8.2. Size:292K  fairchild semi
 fdfs2p103.pdf

FDFS2P753Z FDFS2P753Z

September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

 8.3. Size:88K  fairchild semi
 fdfs2p106a.pdf

FDFS2P753Z FDFS2P753Z

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif

 8.4. Size:141K  fairchild semi
 fdfs2p102a.pdf

FDFS2P753Z FDFS2P753Z

August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

 8.5. Size:142K  fairchild semi
 fdfs2p103a.pdf

FDFS2P753Z FDFS2P753Z

August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifier

Другие MOSFET... FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 , FDFS2P103A , FDFS2P106A , FDFS2P753AZ , MMIS60R580P , FDFS6N303 , FDFS6N548 , FDFS6N754 , FDG313ND87Z , FDG329N , FDG361N , FDH15N50 , FDH27N50 .

 

 
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