FDH50N50F133 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDH50N50F133

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 360 nS

Cossⓘ - Capacitancia de salida: 760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: TO-247

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FDH50N50F133 datasheet

 6.1. Size:540K  fairchild semi
 fdh50n50 f133 fda50n50.pdf pdf_icon

FDH50N50F133

October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 6.2. Size:545K  fairchild semi
 fdh50n50 f133.pdf pdf_icon

FDH50N50F133

February 2012 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e

 6.3. Size:1195K  fairchild semi
 fdh50n50.pdf pdf_icon

FDH50N50F133

May 2014 FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 m Features Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45

 6.4. Size:223K  onsemi
 fdh50n50 fda50n50.pdf pdf_icon

FDH50N50F133

TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t

MOSTRAR MÁS

Otros transistores... FDFS6N303, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, SI2302, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442, FDJ127P