FDH50N50F133 Todos los transistores

 

FDH50N50F133 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDH50N50F133
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 137 nC
   trⓘ - Tiempo de subida: 360 nS
   Cossⓘ - Capacitancia de salida: 760 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO-247
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FDH50N50F133 Datasheet (PDF)

 6.1. Size:540K  fairchild semi
fdh50n50 f133 fda50n50.pdf pdf_icon

FDH50N50F133

October 2008TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es

 6.2. Size:545K  fairchild semi
fdh50n50 f133.pdf pdf_icon

FDH50N50F133

February 2012TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e

 6.3. Size:1195K  fairchild semi
fdh50n50.pdf pdf_icon

FDH50N50F133

May 2014FDH50N50 / FDA50N50N-Channel UniFETTM MOSFET 500 V, 48 A, 105 mFeatures Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45

 6.4. Size:223K  onsemi
fdh50n50 fda50n50.pdf pdf_icon

FDH50N50F133

TMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored t

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FW344A | BLV640 | IPI120N04S4-02 | 2SK3112-ZJ | IRF9317PBF | S80N10R | NVMFS5C406N

 

 
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