FDH50N50F133 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDH50N50F133
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 360 nS
   Cossⓘ - Capacitancia de salida: 760 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO-247

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FDH50N50F133 Datasheet (PDF)

6.1. Size:540K fairchild semi
fdh50n50 f133 fda50n50.pdf

October 2008TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es

6.2. Size:545K fairchild semi
fdh50n50 f133.pdf

February 2012TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e

6.3. Size:1195K fairchild semi
fdh50n50.pdf

May 2014FDH50N50 / FDA50N50N-Channel UniFETTM MOSFET 500 V, 48 A, 105 mFeatures Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45

6.4. Size:223K onsemi
fdh50n50 fda50n50.pdf

TMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored t

6.5. Size:238K inchange semiconductor
fdh50n50.pdf

isc N-Channel MOSFET Transistor FDH50N50FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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