FDH50N50F133 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDH50N50F133
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 625 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 48 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 137 nC
Время нарастания (tr): 360 ns
Выходная емкость (Cd): 760 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.105 Ohm
Тип корпуса: TO-247
Аналог (замена) для FDH50N50F133
FDH50N50F133 Datasheet (PDF)
fdh50n50 f133 fda50n50.pdf
October 2008TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es
fdh50n50 f133.pdf
February 2012TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e
fdh50n50.pdf
May 2014FDH50N50 / FDA50N50N-Channel UniFETTM MOSFET 500 V, 48 A, 105 mFeatures Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45
fdh50n50 fda50n50.pdf
TMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored t
fdh50n50.pdf
isc N-Channel MOSFET Transistor FDH50N50FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate
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