FDH50N50F133 Specs and Replacement

Type Designator: FDH50N50F133

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 360 nS

Cossⓘ - Output Capacitance: 760 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO-247

FDH50N50F133 substitution

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FDH50N50F133 datasheet

 6.1. Size:540K  fairchild semi
 fdh50n50 f133 fda50n50.pdf pdf_icon

FDH50N50F133

October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es... See More ⇒

 6.2. Size:545K  fairchild semi
 fdh50n50 f133.pdf pdf_icon

FDH50N50F133

February 2012 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e... See More ⇒

 6.3. Size:1195K  fairchild semi
 fdh50n50.pdf pdf_icon

FDH50N50F133

May 2014 FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 m Features Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45... See More ⇒

 6.4. Size:223K  onsemi
 fdh50n50 fda50n50.pdf pdf_icon

FDH50N50F133

TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t... See More ⇒

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Detailed specifications: FDFS6N303, FDFS6N548, FDFS6N754, FDG313ND87Z, FDG329N, FDG361N, FDH15N50, FDH27N50, SI2302, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442, FDJ127P

Keywords - FDH50N50F133 MOSFET specs

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