FDI3652 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDI3652

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 61 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-262AA

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FDI3652 datasheet

 ..1. Size:260K  fairchild semi
 fdi3652.pdf pdf_icon

FDI3652

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 ..2. Size:263K  fairchild semi
 fdb3652 fdp3652 fdi3652.pdf pdf_icon

FDI3652

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 ..3. Size:282K  inchange semiconductor
 fdi3652.pdf pdf_icon

FDI3652

isc N-Channel MOSFET Transistor FDI36352 FEATURES Drain Current I = 61A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpo

 9.1. Size:656K  fairchild semi
 fdb3632 fdp3632 fdi3632 fdh3632.pdf pdf_icon

FDI3652

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

MOSTRAR MÁS

Otros transistores... FDH15N50, FDH27N50, FDH50N50F133, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, STF13NM60N, FDI8442, FDJ127P, FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, FDM606P