All MOSFET. FDI3652 Datasheet

 

FDI3652 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDI3652
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-262AA

 FDI3652 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDI3652 Datasheet (PDF)

 ..1. Size:260K  fairchild semi
 fdi3652.pdf

FDI3652 FDI3652

October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 ..2. Size:263K  fairchild semi
 fdb3652 fdp3652 fdi3652.pdf

FDI3652 FDI3652

October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 ..3. Size:282K  inchange semiconductor
 fdi3652.pdf

FDI3652 FDI3652

isc N-Channel MOSFET Transistor FDI36352FEATURESDrain Current I = 61A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo

 9.1. Size:656K  fairchild semi
 fdb3632 fdp3632 fdi3632 fdh3632.pdf

FDI3652 FDI3652

December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

 9.2. Size:282K  inchange semiconductor
 fdi3632.pdf

FDI3652 FDI3652

isc N-Channel MOSFET Transistor FDI3632FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

Datasheet: FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , FDI025N06 , FDI047AN08A0 , FDI2532 , FDI33N25 , 2N60 , FDI8442 , FDJ127P , FDJ128N , FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC , FDM606P .

History: IXTH4N150

 

 
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