FDMC86570LET60 Todos los transistores

 ..1. Size:283K  fairchild semi
 fdmc86570let60.pdf

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench MOSFET 60 V, 87 A, 4.3 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

 4.1. Size:373K  fairchild semi
 fdmc86570l.pdf

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

 4.2. Size:325K  onsemi
 fdmc86570l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:300K  fairchild semi
 fdmc8651.pdf

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m Features General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profi

 7.2. Size:269K  fairchild semi
 fdmc86520l.pdf

August 2011 FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m Features General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

 7.3. Size:277K  fairchild semi
 fdmc86520dc.pdf

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

 7.4. Size:307K  onsemi
 fdmc8651.pdf

FDMC8651 General Description N-Channel Power Trench MOSFET This device has been designed specifically to improve the 30 V, 20 A, 6.1 m efficiency of DC/DC converters. Using new techniques in Features MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A losses. Low g

 7.5. Size:858K  onsemi
 fdmc86520l.pdf

FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m General Description Features This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A conventional switchi