January 2015FDMC86570LET60N-Channel Shielded Gate PowerTrench MOSFET60 V, 87 A, 4.3 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

May 2013FDMC86570LN-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mFeatures Shielded Gate MOSFET TechnologyGeneral Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 Aincorporates Shielded Gate technolo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2008FDMC8651N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mFeatures General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 AMOSFET construction, the various components of gate charge Low Profi

August 2011FDMC86520LN-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mFeatures General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or Low P

September 2012FDMC86520DCN-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

FDMC8651General DescriptionN-Channel Power Trench MOSFETThis device has been designed specifically to improve the 30 V, 20 A, 6.1 mefficiency of DC/DC converters. Using new techniques in FeaturesMOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 Alosses. Low g

FDMC86520LN-Channel Power Trench MOSFET60 V, 22 A, 7.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aconventional switchi