All MOSFET. FDMC86570LET60 Datasheet

 

FDMC86570LET60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMC86570LET60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 87 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 6.2 nS

Drain-Source Capacitance (Cd): 821 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: Power33

FDMC86570LET60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC86570LET60 Datasheet (PDF)

1.1. fdmc86570let60.pdf Size:283K _upd-mosfet

FDMC86570LET60
FDMC86570LET60

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 mΩ at VGS = 10

1.2. fdmc86570l.pdf Size:373K _fairchild_semi

FDMC86570LET60
FDMC86570LET60

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

 3.1. fdmc86520l.pdf Size:269K _fairchild_semi

FDMC86570LET60
FDMC86570LET60

August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

3.2. fdmc86520dc.pdf Size:277K _fairchild_semi

FDMC86570LET60
FDMC86570LET60

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 mΩ

 3.3. fdmc8651.pdf Size:300K _fairchild_semi

FDMC86570LET60
FDMC86570LET60

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m? Features General Description Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profile - 1 mm

Datasheet: FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P , FDMC86340ET80 , IRF630A , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , FDME0106NZT , FDMS0308CS , FDMS8050ET30 .

Back to Top

 


FDMC86570LET60
  FDMC86570LET60
  FDMC86570LET60
 

social 

LIST

Last Update

MOSFET: ALD1116SAL | ALD1116PAL | ALD1116DA | ALD1106SBL | ALD1106PBL | ALD1106DB | ALD1105SBL | ALD1105PBL | ALD1105DB | ALD1103SBL | ALD1103PBL | ALD1103DB | ALD1102SAL | ALD1102PAL | ALD1102DA |

 

 

Back to Top