FDP16N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

October 2009UniFETTMFDP16N50U / FDPF16N50UTtmN-Channel MOSFET, FRFET500V, 15A, 0.48Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 32nC)DMOS technology. Low Crss ( Typ. 20pF)This advance tech

July 2002FDP16AN08A0 / FDB16AN08A0N-Channel PowerTrench MOSFET75V, 58A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP16AN08A0FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 16m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25