Справочник MOSFET. FDP16N50

 

FDP16N50 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP16N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 235 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

FDP16N50 Datasheet (PDF)

 ..1. Size:432K  fairchild semi
fdp16n50.pdfpdf_icon

FDP16N50

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

 ..2. Size:464K  fairchild semi
fdp16n50 fdpf16n50.pdfpdf_icon

FDP16N50

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

 0.1. Size:241K  fairchild semi
fdp16n50u fdpf16n50ut.pdfpdf_icon

FDP16N50

October 2009UniFETTMFDP16N50U / FDPF16N50UTtmN-Channel MOSFET, FRFET500V, 15A, 0.48Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 32nC)DMOS technology. Low Crss ( Typ. 20pF)This advance tech

 9.1. Size:267K  fairchild semi
fdp16an08a0 fdb16an08a0.pdfpdf_icon

FDP16N50

July 2002FDP16AN08A0 / FDB16AN08A0N-Channel PowerTrench MOSFET75V, 58A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab

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History: 2SK3117 | NTMD6N03R2 | FDMS0309AS

 

 
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