FDP16N50 Specs and Replacement

Type Designator: FDP16N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220

FDP16N50 substitution

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FDP16N50 datasheet

 ..1. Size:432K  fairchild semi
 fdp16n50.pdf pdf_icon

FDP16N50

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t... See More ⇒

 ..2. Size:464K  fairchild semi
 fdp16n50 fdpf16n50.pdf pdf_icon

FDP16N50

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t... See More ⇒

 0.1. Size:241K  fairchild semi
 fdp16n50u fdpf16n50ut.pdf pdf_icon

FDP16N50

October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 32nC) DMOS technology. Low Crss ( Typ. 20pF) This advance tech... See More ⇒

 9.1. Size:267K  fairchild semi
 fdp16an08a0 fdb16an08a0.pdf pdf_icon

FDP16N50

July 2002 FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75V, 58A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab... See More ⇒

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Detailed specifications: FDN86501LZ, FDP020N06BF102, FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, FDP14AN06LA0, FDP15N50, FDP15N65, 2N7002, FDP20AN06A0, FDP24AN06LA0, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50

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