FDP8441F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP8441F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 1250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm

Encapsulados: TO-220AB

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FDP8441F085 datasheet

 7.1. Size:303K  fairchild semi
 fdp8441 f085.pdf pdf_icon

FDP8441F085

September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 7.2. Size:381K  fairchild semi
 fdp8441.pdf pdf_icon

FDP8441F085

September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 7.3. Size:284K  inchange semiconductor
 fdp8441 .pdf pdf_icon

FDP8441F085

isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 3.1m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.4. Size:283K  inchange semiconductor
 fdp8441.pdf pdf_icon

FDP8441F085

isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 2.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

MOSTRAR MÁS

Otros transistores... FDP2570, FDP2670, FDP3205, FDP5500, FDP5645, FDP5N50, FDP75N08, FDP79N15, 13N50, FDP8442, FDP8443, FDP8878, FDP8N50NZU, FDPC5018SG, FDPC5030SG, FDPF12N35, FDPF12N50NZT