All MOSFET. FDP8441F085 Datasheet

 

FDP8441F085 Datasheet and Replacement


   Type Designator: FDP8441F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-220AB
 

 FDP8441F085 substitution

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FDP8441F085 Datasheet (PDF)

 7.1. Size:303K  fairchild semi
 fdp8441 f085.pdf pdf_icon

FDP8441F085

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 7.2. Size:381K  fairchild semi
 fdp8441.pdf pdf_icon

FDP8441F085

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 7.3. Size:284K  inchange semiconductor
 fdp8441 .pdf pdf_icon

FDP8441F085

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 3.1m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 7.4. Size:283K  inchange semiconductor
 fdp8441.pdf pdf_icon

FDP8441F085

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 2.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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Datasheet: FDP2570 , FDP2670 , FDP3205 , FDP5500 , FDP5645 , FDP5N50 , FDP75N08 , FDP79N15 , AO4407 , FDP8442 , FDP8443 , FDP8878 , FDP8N50NZU , FDPC5018SG , FDPC5030SG , FDPF12N35 , FDPF12N50NZT .

History: IPS60R280PFD7S | HY3503C2 | CS9N65F

Keywords - FDP8441F085 MOSFET datasheet

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