FDPF15N65YDTU Todos los transistores

 

FDPF15N65YDTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF15N65YDTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 125 nS
   Cossⓘ - Capacitancia de salida: 295 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de FDPF15N65YDTU MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDPF15N65YDTU Datasheet (PDF)

 ..1. Size:457K  fairchild semi
 fdp15n65 fdpf15n65ydtu.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 5.1. Size:490K  fairchild semi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 5.2. Size:490K  onsemi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 7.1. Size:250K  fairchild semi
 fdp15n40 fdpf15n40.pdf pdf_icon

FDPF15N65YDTU

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

MOSTRAR MÁS

Otros transistores... FDP8443 , FDP8878 , FDP8N50NZU , FDPC5018SG , FDPC5030SG , FDPF12N35 , FDPF12N50NZT , FDPF14N30T , IRFP250 , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , FDR6674A .

History: 2SK1524 | BRCS070N03DP | PMPB48EP | CJQ9435 | IPA041N04NG

 

 
Back to Top

 


 
.