All MOSFET. FDPF15N65YDTU Datasheet

 

FDPF15N65YDTU Datasheet and Replacement


   Type Designator: FDPF15N65YDTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO-220F
 

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FDPF15N65YDTU Datasheet (PDF)

 ..1. Size:457K  fairchild semi
 fdp15n65 fdpf15n65ydtu.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 5.1. Size:490K  fairchild semi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 5.2. Size:490K  onsemi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDPF15N65YDTU

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 7.1. Size:250K  fairchild semi
 fdp15n40 fdpf15n40.pdf pdf_icon

FDPF15N65YDTU

October 2008UniFETTMFDP15N40 / FDPF15N40tmN-Channel MOSFET 400V, 15A, 0.3Features Description RDS(on) = 0.24 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 28nC)stripe, DMOS technology. Low Crss ( Typ. 17pF)This advanced technology has

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History: SSM3K43FS | BSC035N10NS5 | P6503FMA | 2SK2152 | P1003EVG | P7006BL | PMV28ENEA

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