FDS4072N7 Todos los transistores

 

FDS4072N7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS4072N7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 12.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 351 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de FDS4072N7 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDS4072N7 Datasheet (PDF)

 ..1. Size:176K  fairchild semi
fds4072n7.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 6.1. Size:168K  fairchild semi
fds4072n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 8.1. Size:171K  fairchild semi
fds4070n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 8.2. Size:185K  fairchild semi
fds4070n7.pdf pdf_icon

FDS4072N7

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt

Otros transistores... FDS3170N7 , FDS3612 , FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , IRF520 , FDS4080N3 , FDS4080N7 , FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z .

History: FMI13N60E | 2N5640 | DM10N65C-2

 

 
Back to Top

 


 
.