FDS4072N7 Specs and Replacement

Type Designator: FDS4072N7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 351 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SO-8

FDS4072N7 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDS4072N7 datasheet

 ..1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High... See More ⇒

 6.1. Size:168K  fairchild semi
 fds4072n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig... See More ⇒

 8.1. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been ... See More ⇒

 8.2. Size:185K  fairchild semi
 fds4070n7.pdf pdf_icon

FDS4072N7

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt... See More ⇒

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Detailed specifications: FDS3170N7, FDS3612, FDS3670, FDS3680, FDS3682, FDS4070N3, FDS4070N7, FDS4072N3, 75N75, FDS4080N3, FDS4080N7, FDS4410A, FDS4770, FDS4780, FDS5170N7, FDS5682, FDS5692Z

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