FDS4072N7. Аналоги и основные параметры

Наименование производителя: FDS4072N7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 351 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS4072N7

- подборⓘ MOSFET транзистора по параметрам

 

FDS4072N7 даташит

 ..1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 6.1. Size:168K  fairchild semi
 fds4072n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 8.1. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4072N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 8.2. Size:185K  fairchild semi
 fds4070n7.pdf pdf_icon

FDS4072N7

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt

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