Справочник MOSFET. FDS4072N7

 

FDS4072N7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS4072N7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 351 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

FDS4072N7 Datasheet (PDF)

 ..1. Size:176K  fairchild semi
fds4072n7.pdfpdf_icon

FDS4072N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 6.1. Size:168K  fairchild semi
fds4072n3.pdfpdf_icon

FDS4072N7

February 2004 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 8.1. Size:171K  fairchild semi
fds4070n3.pdfpdf_icon

FDS4072N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 8.2. Size:185K  fairchild semi
fds4070n7.pdfpdf_icon

FDS4072N7

January 2004 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been opt

Другие MOSFET... FDS3170N7 , FDS3612 , FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , SKD502T , FDS4080N3 , FDS4080N7 , FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z .

History: NVTFS002N04C | SI9945BDY

 

 
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