FDS6675A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6675A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 610 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: SO-8

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FDS6675A datasheet

 ..1. Size:105K  fairchild semi
 fds6675a.pdf pdf_icon

FDS6675A

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

 7.1. Size:505K  fairchild semi
 fds6675bz.pdf pdf_icon

FDS6675A

March 2009 FDS6675BZ tm P-Channel PowerTrench MOSFET -30V, -11A, 13m General Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11A This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A been especially tailored to minimize the on-state resistance. Extended VGS

 7.2. Size:199K  fairchild semi
 fds6675.pdf pdf_icon

FDS6675A

October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V. process that has been especially tailored to minimize the Low gate charge (30nC typical). on-state

 7.3. Size:447K  onsemi
 fds6675bz.pdf pdf_icon

FDS6675A

FDS6675BZ P-Channel PowerTrench MOSFET -30V, -11A, 13m Features General Description Max rDS(on) = 13m at VGS = -10V, ID = -11A This P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

MOSTRAR MÁS

Otros transistores... FDS6064N7, FDS6162N3, FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, AO4407A, FDS6679Z, FDS6680S, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7, FDS7064N