All MOSFET. FDS6675A Datasheet

 

FDS6675A Datasheet and Replacement


   Type Designator: FDS6675A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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FDS6675A Datasheet (PDF)

 ..1. Size:105K  fairchild semi
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FDS6675A

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

 7.1. Size:505K  fairchild semi
fds6675bz.pdf pdf_icon

FDS6675A

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS

 7.2. Size:199K  fairchild semi
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FDS6675A

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

 7.3. Size:447K  onsemi
fds6675bz.pdf pdf_icon

FDS6675A

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9ASemiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP1203GM

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