FDS6675A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDS6675A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 610 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS6675A
FDS6675A Datasheet (PDF)
fds6675a.pdf

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang
fds6675bz.pdf

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS
fds6675.pdf

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state
fds6675bz.pdf

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9ASemiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application
Другие MOSFET... FDS6064N7 , FDS6162N3 , FDS6162N7 , FDS6299S , FDS6572A , FDS6609A , FDS6672A , FDS6673AZ , AO3407 , FDS6679Z , FDS6680S , FDS6688 , FDS6688AS , FDS6688S , FDS6694 , FDS7060N7 , FDS7064N .
History: HGS059N08A | ZXMN7A11GTA | SL4184 | FDU044AN03L | AUIRF7805Q | AP4578GM | OM6104ST
History: HGS059N08A | ZXMN7A11GTA | SL4184 | FDU044AN03L | AUIRF7805Q | AP4578GM | OM6104ST



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