Справочник MOSFET. FDS6675A

 

FDS6675A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS6675A
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: SO-8
 

 Аналог (замена) для FDS6675A

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDS6675A Datasheet (PDF)

 ..1. Size:105K  fairchild semi
fds6675a.pdfpdf_icon

FDS6675A

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

 7.1. Size:505K  fairchild semi
fds6675bz.pdfpdf_icon

FDS6675A

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS

 7.2. Size:199K  fairchild semi
fds6675.pdfpdf_icon

FDS6675A

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

 7.3. Size:447K  onsemi
fds6675bz.pdfpdf_icon

FDS6675A

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9ASemiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

Другие MOSFET... FDS6064N7 , FDS6162N3 , FDS6162N7 , FDS6299S , FDS6572A , FDS6609A , FDS6672A , FDS6673AZ , AO3407 , FDS6679Z , FDS6680S , FDS6688 , FDS6688AS , FDS6688S , FDS6694 , FDS7060N7 , FDS7064N .

History: HGS059N08A | ZXMN7A11GTA | SL4184 | FDU044AN03L | AUIRF7805Q | AP4578GM | OM6104ST

 

 
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