FDS6680S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS6680S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 510 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS6680S MOSFET
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FDS6680S datasheet
fds6680s.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O
fds6680.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O
fds6680a.pdf
November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint
fds6680as.pdf
May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
Otros transistores... FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, FDS6679Z, IRFP064N, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7, FDS7064N, FDS7064N7, FDS7064SN3
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