FDS6680S. Аналоги и основные параметры

Наименование производителя: FDS6680S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 3 V

Qg ⓘ - Общий заряд затвора: 19 nC

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 510 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS6680S

- подборⓘ MOSFET транзистора по параметрам

 

FDS6680S даташит

 ..1. Size:84K  fairchild semi
 fds6680s.pdf pdf_icon

FDS6680S

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O

 7.1. Size:107K  fairchild semi
 fds6680.pdf pdf_icon

FDS6680S

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O

 7.2. Size:102K  fairchild semi
 fds6680a.pdf pdf_icon

FDS6680S

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

 7.3. Size:982K  fairchild semi
 fds6680as.pdf pdf_icon

FDS6680S

May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

ПОКАЗАТЬ ЕЩЁ

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