FDS6680S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS6680S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 11.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 510 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: SO-8
FDS6680S Datasheet (PDF)
fds6680s.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O
fds6680.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O
fds6680a.pdf
November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint
fds6680as.pdf
May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fds6680a.pdf
FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerRDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate
fds6680as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
