FDS6680S Specs and Replacement

Type Designator: FDS6680S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SO-8

FDS6680S substitution

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FDS6680S datasheet

 ..1. Size:84K  fairchild semi
fds6680s.pdf pdf_icon

FDS6680S

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O... See More ⇒

 7.1. Size:107K  fairchild semi
fds6680.pdf pdf_icon

FDS6680S

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O... See More ⇒

 7.2. Size:102K  fairchild semi
fds6680a.pdf pdf_icon

FDS6680S

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint... See More ⇒

 7.3. Size:982K  fairchild semi
fds6680as.pdf pdf_icon

FDS6680S

May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low... See More ⇒

Detailed specifications: FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, FDS6679Z, IRFP064N, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7, FDS7064N, FDS7064N7, FDS7064SN3

Keywords - FDS6680S MOSFET specs

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