FDS6680S Specs and Replacement
Type Designator: FDS6680S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
FDS6680S substitution
- MOSFET ⓘ Cross-Reference Search
FDS6680S datasheet
fds6680s.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O... See More ⇒
fds6680.pdf
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. O... See More ⇒
fds6680a.pdf
November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint... See More ⇒
fds6680as.pdf
May 2008 tm FDS6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low... See More ⇒
Detailed specifications: FDS6162N7, FDS6299S, FDS6572A, FDS6609A, FDS6672A, FDS6673AZ, FDS6675A, FDS6679Z, IRFP064N, FDS6688, FDS6688AS, FDS6688S, FDS6694, FDS7060N7, FDS7064N, FDS7064N7, FDS7064SN3
Keywords - FDS6680S MOSFET specs
FDS6680S cross reference
FDS6680S equivalent finder
FDS6680S pdf lookup
FDS6680S substitution
FDS6680S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP3990I-HF | 2SK512
🌐 : EN ES РУ
LIST
Last Update
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8
Popular searches
bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061 | a1023
