IRFR012 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR012
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 33 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IRFR012 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFR012 datasheet
8.3. Size:1318K international rectifier
irfr014pbf irfu014pbf.pdf 
PD-95065A IRFR014PbF IRFU014PbF Lead-Free 12/10/04 Document Number 91263 www.vishay.com 1 IRFR/U014PbF Document Number 91263 www.vishay.com 2 IRFR/U014PbF Document Number 91263 www.vishay.com 3 IRFR/U014PbF Document Number 91263 www.vishay.com 4 IRFR/U014PbF Document Number 91263 www.vishay.com 5 IRFR/U014PbF Document Number 91263 www.vishay.com 6 IRFR/U014
8.4. Size:494K samsung
irfr014a.pdf
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
8.5. Size:309K vishay
irfr010 sihfr010.pdf
IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Qgs (nC) 2.6 Excellent Temperature Stability Qgd (nC) 4.8 Material categorization For definitions of compliance please see www.vishay.com/doc?
8.6. Size:888K vishay
irfr014 irfu014 sihfr014 sihfu014.pdf
IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014) DPAK IPAK Straight lead (IRFU014, SiHFU014) (TO-252) (TO-251) D Available in tape and reel G D Available Fast switching Ease of paralleling S G S D Simple drive requirements G S Material categor
8.7. Size:1696K vishay
irfr010pbf sihfr010.pdf
IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgs (nC) 2.6 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 4.8 Configuration Single DESCRIPTION The Power MOSFET technology i
8.8. Size:1947K vishay
irfr014pbf irfu014pbf sihfr014 sihfu014.pdf
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014) Qgs (nC) 3.1 Available in Tape and Reel Qgd (nC) 5.8 Fast Switching
Otros transistores... IRFPF40, IRFPF50, IRFPG30, IRFPG40, IRFPG50, IRFPS37N50A, IRFPS59N60C, IRFR010, IRFZ44N, IRFR014, IRFR014A, IRFR015, IRFR020, IRFR022, IRFR024, IRFR024A, IRFR024N
