IRFR012
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFR012
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6.7
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 33
ns
Cossⓘ - Выходная емкость: 150
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3
Ohm
Тип корпуса:
TO252
- подбор MOSFET транзистора по параметрам
IRFR012
Datasheet (PDF)
8.3. Size:1318K international rectifier
irfr014pbf irfu014pbf.pdf 
PD-95065AIRFR014PbFIRFU014PbF Lead-Free12/10/04Document Number: 91263 www.vishay.com1IRFR/U014PbFDocument Number: 91263 www.vishay.com2IRFR/U014PbFDocument Number: 91263 www.vishay.com3IRFR/U014PbFDocument Number: 91263 www.vishay.com4IRFR/U014PbFDocument Number: 91263 www.vishay.com5IRFR/U014PbFDocument Number: 91263 www.vishay.com6IRFR/U014
8.4. Size:494K samsung
irfr014a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
8.5. Size:309K vishay
irfr010 sihfr010.pdf 
IRFR010, SiHFR010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of ParallelingQgs (nC) 2.6 Excellent Temperature StabilityQgd (nC) 4.8 Material categorization: For definitions of complianceplease see www.vishay.com/doc?
8.6. Size:888K vishay
irfr014 irfu014 sihfr014 sihfu014.pdf 
IRFR014, IRFU014, SiHFR014, SiHFU014www.vishay.comVishay SiliconixPower MOSFETFEATURESD Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014)DPAK IPAK Straight lead (IRFU014, SiHFU014)(TO-252) (TO-251)D Available in tape and reelGDAvailable Fast switching Ease of parallelingSG SD Simple drive requirementsGS Material categor
8.7. Size:1696K vishay
irfr010pbf sihfr010.pdf 
IRFR010, SiHFR010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature StabilityQgs (nC) 2.6 Compliant to RoHS Directive 2002/95/ECQgd (nC) 4.8Configuration Single DESCRIPTIONThe Power MOSFET technology i
8.8. Size:1947K vishay
irfr014pbf irfu014pbf sihfr014 sihfu014.pdf 
IRFR014, IRFU014, SiHFR014, SiHFU014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014)Qgs (nC) 3.1 Available in Tape and ReelQgd (nC) 5.8 Fast Switching
Другие MOSFET... IRFPF40
, IRFPF50
, IRFPG30
, IRFPG40
, IRFPG50
, IRFPS37N50A
, IRFPS59N60C
, IRFR010
, IRFZ44N
, IRFR014
, IRFR014A
, IRFR015
, IRFR020
, IRFR022
, IRFR024
, IRFR024A
, IRFR024N
.
History: SSF6N80A
| WMJ38N60C2
| APT18M80B
| IXFH50N50P3
| AO6804A
| IXFN48N50U2
| IRF830FI
