Справочник MOSFET. IRFR012

 

IRFR012 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR012
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR012

 

 

IRFR012 Datasheet (PDF)

 ..1. Size:169K  1
 irfr010 irfr012 irfr014 irfr015.pdf

IRFR012 IRFR012

 ..2. Size:279K  international rectifier
 irfr010 irfr012 irfu010 irfu012.pdf

IRFR012 IRFR012

 8.1. Size:431K  1
 irfu014a irfr014a.pdf

IRFR012 IRFR012

 8.2. Size:172K  international rectifier
 irfr014.pdf

IRFR012 IRFR012

 8.3. Size:1318K  international rectifier
 irfr014pbf irfu014pbf.pdf

IRFR012 IRFR012

PD-95065AIRFR014PbFIRFU014PbF Lead-Free12/10/04Document Number: 91263 www.vishay.com1IRFR/U014PbFDocument Number: 91263 www.vishay.com2IRFR/U014PbFDocument Number: 91263 www.vishay.com3IRFR/U014PbFDocument Number: 91263 www.vishay.com4IRFR/U014PbFDocument Number: 91263 www.vishay.com5IRFR/U014PbFDocument Number: 91263 www.vishay.com6IRFR/U014

 8.4. Size:494K  samsung
 irfr014a.pdf

IRFR012 IRFR012

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 8.5. Size:309K  vishay
 irfr010 sihfr010.pdf

IRFR012 IRFR012

IRFR010, SiHFR010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of ParallelingQgs (nC) 2.6 Excellent Temperature StabilityQgd (nC) 4.8 Material categorization: For definitions of complianceplease see www.vishay.com/doc?

 8.6. Size:888K  vishay
 irfr014 irfu014 sihfr014 sihfu014.pdf

IRFR012 IRFR012

IRFR014, IRFU014, SiHFR014, SiHFU014www.vishay.comVishay SiliconixPower MOSFETFEATURESD Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014)DPAK IPAK Straight lead (IRFU014, SiHFU014)(TO-252) (TO-251)D Available in tape and reelGDAvailable Fast switching Ease of parallelingSG SD Simple drive requirementsGS Material categor

 8.7. Size:1696K  vishay
 irfr010pbf sihfr010.pdf

IRFR012 IRFR012

IRFR010, SiHFR010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature StabilityQgs (nC) 2.6 Compliant to RoHS Directive 2002/95/ECQgd (nC) 4.8Configuration Single DESCRIPTIONThe Power MOSFET technology i

 8.8. Size:1947K  vishay
 irfr014pbf irfu014pbf sihfr014 sihfu014.pdf

IRFR012 IRFR012

IRFR014, IRFU014, SiHFR014, SiHFU014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014)Qgs (nC) 3.1 Available in Tape and ReelQgd (nC) 5.8 Fast Switching

Другие MOSFET... IRFPF40 , IRFPF50 , IRFPG30 , IRFPG40 , IRFPG50 , IRFPS37N50A , IRFPS59N60C , IRFR010 , IRFZ44N , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N .

 

 
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