All MOSFET. IRFR012 Datasheet

 

IRFR012 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFR012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

 IRFR012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR012 Datasheet (PDF)

 ..1. Size:169K  1
 irfr010 irfr012 irfr014 irfr015.pdf

IRFR012 IRFR012

 ..2. Size:279K  international rectifier
 irfr010 irfr012 irfu010 irfu012.pdf

IRFR012 IRFR012

 8.1. Size:431K  1
 irfu014a irfr014a.pdf

IRFR012 IRFR012

 8.2. Size:172K  international rectifier
 irfr014.pdf

IRFR012 IRFR012

 8.3. Size:1318K  international rectifier
 irfr014pbf irfu014pbf.pdf

IRFR012 IRFR012

PD-95065AIRFR014PbFIRFU014PbF Lead-Free12/10/04Document Number: 91263 www.vishay.com1IRFR/U014PbFDocument Number: 91263 www.vishay.com2IRFR/U014PbFDocument Number: 91263 www.vishay.com3IRFR/U014PbFDocument Number: 91263 www.vishay.com4IRFR/U014PbFDocument Number: 91263 www.vishay.com5IRFR/U014PbFDocument Number: 91263 www.vishay.com6IRFR/U014

 8.4. Size:494K  samsung
 irfr014a.pdf

IRFR012 IRFR012

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 8.5. Size:309K  vishay
 irfr010 sihfr010.pdf

IRFR012 IRFR012

IRFR010, SiHFR010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of ParallelingQgs (nC) 2.6 Excellent Temperature StabilityQgd (nC) 4.8 Material categorization: For definitions of complianceplease see www.vishay.com/doc?

 8.6. Size:888K  vishay
 irfr014 irfu014 sihfr014 sihfu014.pdf

IRFR012 IRFR012

IRFR014, IRFU014, SiHFR014, SiHFU014www.vishay.comVishay SiliconixPower MOSFETFEATURESD Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014)DPAK IPAK Straight lead (IRFU014, SiHFU014)(TO-252) (TO-251)D Available in tape and reelGDAvailable Fast switching Ease of parallelingSG SD Simple drive requirementsGS Material categor

 8.7. Size:1696K  vishay
 irfr010pbf sihfr010.pdf

IRFR012 IRFR012

IRFR010, SiHFR010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature StabilityQgs (nC) 2.6 Compliant to RoHS Directive 2002/95/ECQgd (nC) 4.8Configuration Single DESCRIPTIONThe Power MOSFET technology i

 8.8. Size:1947K  vishay
 irfr014pbf irfu014pbf sihfr014 sihfu014.pdf

IRFR012 IRFR012

IRFR014, IRFU014, SiHFR014, SiHFU014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014)Qgs (nC) 3.1 Available in Tape and ReelQgd (nC) 5.8 Fast Switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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