FDS7066ASN3 Todos los transistores

 ..1. Size:132K  fairchild semi
 fds7066asn3.pdf

August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

 7.1. Size:169K  fairchild semi
 fds7066n3.pdf

February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 7.2. Size:179K  fairchild semi
 fds7066n7.pdf

February 2004 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 8.1. Size:169K  fairchild semi
 fds7064n.pdf

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim

 8.2. Size:211K  fairchild semi
 fds7060n7.pdf

May 2003 FDS7060N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High perfor

 8.3. Size:173K  fairchild semi
 fds7064n7.pdf

February 2004 FDS7064N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16.5 A, 30 V RDS(ON) = 7.0 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been o

 8.4. Size:193K  fairchild semi
 fds7064sn3.pdf

February 2004 FDS7064SN3 30V N-Channel PowerTrench SyncFET General Description Features 16 A, 30 V RDS(ON) = 8.0 m @ VGS = 10 V The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, RDS(ON) = 9.5 m @ VGS = 4.5 V (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control sw