All MOSFET. FDS7066ASN3 Datasheet

 

FDS7066ASN3 Datasheet and Replacement


   Type Designator: FDS7066ASN3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: SO-8
 

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FDS7066ASN3 Datasheet (PDF)

 ..1. Size:132K  fairchild semi
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FDS7066ASN3

August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

 7.1. Size:169K  fairchild semi
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FDS7066ASN3

February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 7.2. Size:179K  fairchild semi
fds7066n7.pdf pdf_icon

FDS7066ASN3

February 2004 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

 8.1. Size:169K  fairchild semi
fds7064n.pdf pdf_icon

FDS7066ASN3

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim

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