FDS7066ASN3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS7066ASN3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 19 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 710 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0048 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS7066ASN3
FDS7066ASN3 Datasheet (PDF)
fds7066asn3.pdf
August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
fds7066n3.pdf
February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig
fds7066n7.pdf
February 2004 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig
fds7064n.pdf
January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim
fds7060n7.pdf
May 2003 FDS7060N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High perfor
fds7064n7.pdf
February 2004 FDS7064N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16.5 A, 30 V RDS(ON) = 7.0 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been o
fds7064sn3.pdf
February 2004 FDS7064SN3 30V N-Channel PowerTrench SyncFET General Description Features 16 A, 30 V RDS(ON) = 8.0 m @ VGS = 10 V The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, RDS(ON) = 9.5 m @ VGS = 4.5 V (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control sw
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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