FDU8874 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDU8874

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 116 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 96 nS

Cossⓘ - Capacitancia de salida: 585 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm

Encapsulados: TO-251AA

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FDU8874 datasheet

 ..1. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8874

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been

 ..2. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDU8874

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8874

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

 8.2. Size:430K  fairchild semi
 fdu8870.pdf pdf_icon

FDU8874

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

MOSTRAR MÁS

Otros transistores... FDU8770F071, FDU8778, FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071, FDU8870, IRFP450, FDU8876, FDU8878, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z