FDU8874 MOSFET Datasheet: N-Ch, 30V, 116A. Full specification with pinout and replacement list

FDU8874 Specs and Replacement

Type Designator: FDU8874

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 116 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 96 nS

Cossⓘ - Output Capacitance: 585 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: TO-251AA

FDU8874 substitution

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FDU8874 datasheet

..1. Size:503K fairchild semi
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o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been... See More ⇒

..2. Size:659K fairchild semi
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April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

8.2. Size:430K fairchild semi
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