Справочник MOSFET. FDU8874

 

FDU8874 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDU8874
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 116 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 96 ns
   Cossⓘ - Выходная емкость: 585 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0051 Ohm
   Тип корпуса: TO-251AA
 

 Аналог (замена) для FDU8874

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDU8874 Datasheet (PDF)

 ..1. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8874

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

 ..2. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDU8874

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8874

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.2. Size:430K  fairchild semi
 fdu8870.pdf pdf_icon

FDU8874

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDU8770F071 , FDU8778 , FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , IRF1407 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z .

History: IPD60R180P7 | TK16V60W5 | CSD86330Q3D | NX3020NAK | 50N06G | ME90N03-G | IRF2903ZLPBF

 

 
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