FDU8878 Todos los transistores

 

FDU8878 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDU8878
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 79 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-251AA
 

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FDU8878 Datasheet (PDF)

 ..1. Size:400K  fairchild semi
 fdd8878 fdu8878 fdu8878.pdf pdf_icon

FDU8878

0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim

 ..2. Size:400K  onsemi
 fdd8878 fdu8878.pdf pdf_icon

FDU8878

0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8878

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8878

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

MOSTRAR MÁS

Otros transistores... FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , AO4407 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 .

History: IPL60R650P6S | FDU8882 | IPL60R360P6S | IPA60R400CE | FDU8876 | IRFP064NPBF | IRFP064VPBF

 

 
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