FDU8878. Аналоги и основные параметры

Наименование производителя: FDU8878

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 79 ns

Cossⓘ - Выходная емкость: 195 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: TO-251AA

Аналог (замена) для FDU8878

- подборⓘ MOSFET транзистора по параметрам

 

FDU8878 даташит

 ..1. Size:400K  fairchild semi
 fdd8878 fdu8878 fdu8878.pdf pdf_icon

FDU8878

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim

 ..2. Size:400K  onsemi
 fdd8878 fdu8878.pdf pdf_icon

FDU8878

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8878

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8878

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876, AO4407, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, FDV302PNB8V001, FDV303NNB9U008