All MOSFET. FDU8878 Datasheet

 

FDU8878 Datasheet and Replacement


   Type Designator: FDU8878
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-251AA
 

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FDU8878 Datasheet (PDF)

 ..1. Size:400K  fairchild semi
 fdd8878 fdu8878 fdu8878.pdf pdf_icon

FDU8878

0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim

 ..2. Size:400K  onsemi
 fdd8878 fdu8878.pdf pdf_icon

FDU8878

0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8878

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8878

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

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Datasheet: FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , P60NF06 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - FDU8878 MOSFET datasheet

 FDU8878 cross reference
 FDU8878 equivalent finder
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 FDU8878 substitution
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