FDU8896 Todos los transistores

 

FDU8896 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDU8896
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 94 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 106 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-251AA
 

 Búsqueda de reemplazo de FDU8896 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDU8896 Datasheet (PDF)

 ..1. Size:567K  fairchild semi
 fdd8896 fdu8896.pdf pdf_icon

FDU8896

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 ..2. Size:434K  fairchild semi
 fdu8896.pdf pdf_icon

FDU8896

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 9.1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf pdf_icon

FDU8896

2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 9.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8896

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

MOSTRAR MÁS

Otros transistores... FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , STF13NM60N , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P .

History: CHT2301GP | BUK9Y4R4-40E | MMIX1F360N15T2 | NCE50NF600I | JCS7N70B | 2N6917 | SPC6332

 

 
Back to Top

 


 
.