FDU8896 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDU8896
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 94 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 106 ns
Cossⓘ - Выходная емкость: 490 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
Тип корпуса: TO-251AA
FDU8896 Datasheet (PDF)
fdd8896 fdu8896.pdf
April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt
fdu8896.pdf
April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt
fdd8882 fdu8882 fdu8882.pdf
2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
fdd8870 fdu8870.pdf
April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
fdu8874.pdf
oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been
fdd8874 fdu8874.pdf
oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been
fdu8870.pdf
April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
fdd8878 fdu8878 fdu8878.pdf
0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim
fdu8880.pdf
May 2008FDU8880 tmN-Channel PowerTrench MOSFET30V, 58A, 10mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 13m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for low
fdd8876 fdu8876 fdu8876.pdf
NApril 2008FDD8876 / FDU8876tmN-Channel PowerTrench MOSFET30V, 73A, 8.2mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 10m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
fdd8870 fdu8870.pdf
September 2004FDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9m General Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
fdd8878 fdu8878.pdf
0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F