FDU8896 Specs and Replacement

Type Designator: FDU8896

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 106 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO-251AA

FDU8896 substitution

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FDU8896 datasheet

 ..1. Size:567K  fairchild semi
 fdd8896 fdu8896.pdf pdf_icon

FDU8896

April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

 ..2. Size:434K  fairchild semi
 fdu8896.pdf pdf_icon

FDU8896

April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

 9.1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf pdf_icon

FDU8896

2 April 2008 FDD8882 / FDU8882 tm N-Channel PowerTrench MOSFET 30V, 55A, 11.5m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 15m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

 9.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8896

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

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Detailed specifications: FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876, FDU8878, FDU8880, FDU8882, IRFP250, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, FDV302PNB8V001, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003, FDW252P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.