All MOSFET. FDU8896 Datasheet

 

FDU8896 Datasheet and Replacement


   Type Designator: FDU8896
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO-251AA
 

 FDU8896 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDU8896 Datasheet (PDF)

 ..1. Size:567K  fairchild semi
 fdd8896 fdu8896.pdf pdf_icon

FDU8896

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 ..2. Size:434K  fairchild semi
 fdu8896.pdf pdf_icon

FDU8896

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 9.1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf pdf_icon

FDU8896

2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 9.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8896

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

SHOW MORE

Datasheet: FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , STF13NM60N , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P .

History: PE532DX | 15N65G-TQ2-T | MPVA10N65F | CHT2301GP | NCE60NF730K | 6N65KG-TF3-T | AP6679BGP-HF

Keywords - FDU8896 MOSFET datasheet

 FDU8896 cross reference
 FDU8896 equivalent finder
 FDU8896 lookup
 FDU8896 substitution
 FDU8896 replacement

 

 
Back to Top

 


 
.