FDV301NNB9V005 Todos los transistores

 7.1. Size:173K  fairchild semi
 fdv301n d87z fdv301n nb9v005.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 7.2. Size:213K  fairchild semi
 fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 7.3. Size:213K  onsemi
 fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. This N-Channel logic level enhancement mode field effect RDS(ON) = 5 @ VGS= 2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 4 @ VGS= 4.5 V. especially tailored to minimize on-

 7.4. Size:1797K  kexin
 fdv301n.pdf

N-Channel MOSFET FDV301N SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1. Gate 2. Source 3. Drain 0.4 +0.1 +0.1 2.4 -0.1 1.3 -0.1 0.55 +0.1 0.97 -0.1 +0.1 0-0.1 0.38 -0.1 N-Channel MOSFET FDV301N Marking Marking 301 SMD Type MOSFET N-Channel MOSFET FDV301N Typical Characterisitics 1.4 0.5 V GS = 4

 7.5. Size:2795K  slkor
 fdv301n.pdf

FDV301N N-Channel MOSFET 3 2 1. Gate 2. Source 1 3. Drain Simplified outline(SOT-23) www.slkormicro.com 1 FDV301N www.slkormicro.com 2 FDV301N Typical Characterisitics 1.4 0.5 V GS = 4.5V 4.0 3.5 VG S = 2.0V 0.4 3 .0 1.2 2 .7 2.5 2.5 0.3 2 .7 1 3.0 0.2 2 .0 3 .5 4 .0 0.8 4 .5 0.1 1.5 0 0.6 0 0 .5 1 1.5 2 2.5 3 0 0 .1 0 .2 0 .3 0 .4 0.5 V , DRAIN

 7.6. Size:2320K  cn vbsemi
 fdv301n.pdf

FDV301N www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C