All MOSFET. FDV301NNB9V005 Datasheet

 

FDV301NNB9V005 Datasheet and Replacement


   Type Designator: FDV301NNB9V005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-23
 

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FDV301NNB9V005 Datasheet (PDF)

 7.1. Size:173K  fairchild semi
fdv301n d87z fdv301n nb9v005.pdf pdf_icon

FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.2. Size:213K  fairchild semi
fdv301n.pdf pdf_icon

FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.3. Size:213K  onsemi
fdv301n.pdf pdf_icon

FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.4. Size:1797K  kexin
fdv301n.pdf pdf_icon

FDV301NNB9V005

N-Channel MOSFETFDV301NSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11. Gate2. Source3. Drain0.4+0.1+0.12.4-0.11.3-0.10.55+0.10.97-0.1+0.10-0.10.38-0.1N-Channel MOSFETFDV301N MarkingMarking 301SMD Type MOSFETN-Channel MOSFETFDV301N Typical Characterisitics1.40.5V GS = 4

Datasheet: FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , 5N65 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ .

History: MMP6975 | PDC3912Z | HGN240N15S | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

Keywords - FDV301NNB9V005 MOSFET datasheet

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