All MOSFET. FDV301NNB9V005 Datasheet

 

FDV301NNB9V005 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDV301NNB9V005
   Marking Code: 301
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.06 V
   |Id|ⓘ - Maximum Drain Current: 0.22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-23

 FDV301NNB9V005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDV301NNB9V005 Datasheet (PDF)

 7.1. Size:173K  fairchild semi
 fdv301n d87z fdv301n nb9v005.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.2. Size:213K  fairchild semi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.3. Size:213K  onsemi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.4. Size:1797K  kexin
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

N-Channel MOSFETFDV301NSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11. Gate2. Source3. Drain0.4+0.1+0.12.4-0.11.3-0.10.55+0.10.97-0.1+0.10-0.10.38-0.1N-Channel MOSFETFDV301N MarkingMarking 301SMD Type MOSFETN-Channel MOSFETFDV301N Typical Characterisitics1.40.5V GS = 4

 7.5. Size:2795K  slkor
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

FDV301NN-Channel MOSFET321. Gate2. Source13. Drain Simplified outline(SOT-23)www.slkormicro.com 1FDV301Nwww.slkormicro.com 2FDV301N Typical Characterisitics1.40.5V GS = 4.5V4.03.5VG S = 2.0V0.43 .01.22 .72.52.50.32 .713.00.22 .03 .54 .00.84 .50.11.50 0.60 0 .5 1 1.5 2 2.5 3 0 0 .1 0 .2 0 .3 0 .4 0.5V , DRAIN

 7.6. Size:2320K  cn vbsemi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

FDV301Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FHP130N10A | NTTFS4928N

 

 
Back to Top