Справочник MOSFET. FDV301NNB9V005

 

FDV301NNB9V005 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDV301NNB9V005
   Маркировка: 301
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.06 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для FDV301NNB9V005

 

 

FDV301NNB9V005 Datasheet (PDF)

 7.1. Size:173K  fairchild semi
 fdv301n d87z fdv301n nb9v005.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.2. Size:213K  fairchild semi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.3. Size:213K  onsemi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-

 7.4. Size:1797K  kexin
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

N-Channel MOSFETFDV301NSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11. Gate2. Source3. Drain0.4+0.1+0.12.4-0.11.3-0.10.55+0.10.97-0.1+0.10-0.10.38-0.1N-Channel MOSFETFDV301N MarkingMarking 301SMD Type MOSFETN-Channel MOSFETFDV301N Typical Characterisitics1.40.5V GS = 4

 7.5. Size:2795K  slkor
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

FDV301NN-Channel MOSFET321. Gate2. Source13. Drain Simplified outline(SOT-23)www.slkormicro.com 1FDV301Nwww.slkormicro.com 2FDV301N Typical Characterisitics1.40.5V GS = 4.5V4.03.5VG S = 2.0V0.43 .01.22 .72.52.50.32 .713.00.22 .03 .54 .00.84 .50.11.50 0.60 0 .5 1 1.5 2 2.5 3 0 0 .1 0 .2 0 .3 0 .4 0.5V , DRAIN

 7.6. Size:2320K  cn vbsemi
 fdv301n.pdf

FDV301NNB9V005 FDV301NNB9V005

FDV301Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

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