FDV302PD87Z Todos los transistores

 

FDV302PD87Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDV302PD87Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
   Paquete / Cubierta: SOT-23
 

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FDV302PD87Z Datasheet (PDF)

 7.1. Size:63K  fairchild semi
 fdv302p.pdf pdf_icon

FDV302PD87Z

October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t

 7.2. Size:46K  fairchild semi
 fdv302p d87z fdv302p nb8v001.pdf pdf_icon

FDV302PD87Z

October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t

 7.3. Size:165K  onsemi
 fdv302p.pdf pdf_icon

FDV302PD87Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

MOSTRAR MÁS

Otros transistores... FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , STP80NF70 , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ , FDW256P .

History: BSO200P03S | TT8K11 | 2SK2596 | NP82N055NHE

 

 
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