FDV302PD87Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDV302PD87Z
Marking Code: 302
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10
Ohm
Package:
SOT-23
FDV302PD87Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDV302PD87Z
Datasheet (PDF)
7.1. Size:63K fairchild semi
fdv302p.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t
7.2. Size:46K fairchild semi
fdv302p d87z fdv302p nb8v001.pdf
October 1997 FDV302P Digital FET, P-Channel General Description Features-25 V, -0.12 A continuous, -0.5 A Peak.This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially tailored t
7.3. Size:165K onsemi
fdv302p.pdf
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