FDV302PNB8V001 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDV302PNB8V001

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm

Encapsulados: SOT-23

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FDV302PNB8V001 datasheet

 7.1. Size:63K  fairchild semi
 fdv302p.pdf pdf_icon

FDV302PNB8V001

October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t

 7.2. Size:46K  fairchild semi
 fdv302p d87z fdv302p nb8v001.pdf pdf_icon

FDV302PNB8V001

October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect RDS(ON) = 13 @ VGS= -2.7 V transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially tailored t

 7.3. Size:165K  onsemi
 fdv302p.pdf pdf_icon

FDV302PNB8V001

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MOSTRAR MÁS

Otros transistores... FDU8876, FDU8878, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, 5N60, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, FDW256P, FDW258P